Process Hierarchy

on front
  Silicon nitride LPCVD
  2.1 RCA clean
  2.2 HF dip
Materialsilicon nitrideResidual stress1250 MPa
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 1.2 µm
0 .. 1.2 µm
Batch size 24
Material silicon nitride
Wafer size
Wafer size