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Silicon nitride LPCVD: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Silicon nitride LPCVD
1
Piranha clean
2
Pre-furnace clean
2.1
RCA clean
2.2
HF dip
3
Silicon nitride LPCVD
Material
silicon nitride
Residual stress
1250 MPa
on front
4
Spectroscopic ellipsometry film thickness measurement
Thickness
0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 0 .. 1.2 µm
0 .. 1.2 µm
Batch size
24
Material
silicon nitride
Wafer size
Wafer size
100 mm