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About MEMS
Anodic bonding (air, with alignment): View
Process Hierarchy
Bonding
Anodic bonding
Fusion bonding
Glass frit bonding
Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Anodic bonding (air, with alignment)
1
Megasonic clean
2
Anodic bonding (air, with alignment)
Alignment type
Method used to align materials to be bonded.
optical
Ambient
Ambient to which substrate is exposed during processing
air
Batch size
2
Bonded materials
Pair of materials bonded by this process
glass (Hoya), Pyrex (Corning 7740), silicon
Pressure
Pressure of process chamber during processing
1 atm
Wafer size
Wafer size
100 mm
150 mm
Comments:
Note that 150 mm wafer is not cleaned completely in this tool. The megasonic head does not go to the wafer edge, so only about 80% of the wafer is cleaned from the center out.