Process Hierarchy

  Anodic bonding (air, with alignment)
Alignment type
Method used to align materials to be bonded.
optical
Ambient
Ambient to which substrate is exposed during processing
air
Batch size 2
Bonded materials
Pair of materials bonded by this process
glass (Hoya), Pyrex (Corning 7740), silicon
Pressure
Pressure of process chamber during processing
1 atm
Wafer size
Wafer size
Comments:
  • Note that 150 mm wafer is not cleaned completely in this tool. The megasonic head does not go to the wafer edge, so only about 80% of the wafer is cleaned from the center out.