Process Hierarchy

  Anodic bonding (vacuum, without alignment)
Alignment type
Method used to align materials to be bonded.
Batch size 2
Bonded materials
Pair of materials bonded by this process
silicon, Pyrex (Corning 7740), glass (Hoya)
Pressure of process chamber during processing
0.1 mTorr
Wafer size
Wafer size
  • Note that 150 mm wafer is not cleaned completely in this tool. The megasonic head does not go to the wafer edge, so only about 80% of the wafer is cleaned from the center out.