Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide plasma etch
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  1 Silicon dioxide plasma etch
Materialsilicon dioxide
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  2 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Batch size 12
Material silicon dioxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 2.15, silicon dioxide: 1
Wafer size
Wafer size