Process Hierarchy

on front
  Silicon dioxide plasma etch
Materialsilicon dioxide
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Batch size 12
Material silicon dioxide
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2.15, silicon dioxide: 1
Wafer size
Wafer size