Process Hierarchy

on front
  Silicon dioxide plasma etch (anisotropic)
on front
  1 Resist hardening
Materialsilicon dioxide
on front
  3 Polymer clean-up
Materialpolymer (category)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Etch rate 0.033 µm/min
Material silicon dioxide
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 4, silicon dioxide: 1
Wafer size
Wafer size
  • Polymer clean-up is necessary after this plasma etch.