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Anodic bonding (without alignment): View
Process Hierarchy
Bonding
Anodic bonding
Fusion bonding
Glass frit bonding
Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Anodic bonding (without alignment)
1
Solvent clean (acetone +IPA)
2
Anodic bonding (without alignment)
Process characteristics:
Bonding force
Specify contact force applied to substrates during bonding.
Bonding force
*
N
Specify contact force applied to substrates during bonding., must be 50 .. 150 N
50 .. 150 N
Second substrate side bonded
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Second substrate side bonded
*
back
front
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Substrate side bonded
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Substrate side bonded
*
back
front
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Temperature
Temperature of the substrates during bonding.
Temperature
*
°C
Temperature of the substrates during bonding., must be 300 .. 550 °C
300 .. 550 °C
Voltage
Voltage applied across wafers during bonding.
Voltage
*
V
Voltage applied across wafers during bonding., must be 500 .. 1200 V
500 .. 1200 V
Pressure
Pressure of process chamber during processing
1 atm
Wafer size
Wafer size
100 mm
Comments:
No organic materials permitted.
No metals on non-bonded wafer faces.
Maximum interconnect thickness between bonded pair = 300A.
Customer to provide bonding cross section and estimate of area bonded.
Other metals may be considered on an individual basis.