Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (front-front align)
  1 Dehydration bake
on front
  2 Photoresist spin coat
MaterialShipley 1812Thickness1.5 µm
  3 Photoresist softbake
Materialphotoresist (I-line) (category)
on front
  4 Contact front-front alignment
on front
  5 Contact exposure
  6 Photoresist develop
Depth1 .. 10 µmMaterialShipley 1812
Process characteristics:
Material
Material*
Perform dehydration bake
Perform dehydration bake*
yes no
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 1 .. 10 µm
1 .. 10 µm
Magnification 1
Wafer size
Wafer size