Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Advanced oxide etch
Process characteristics:
Depth
Depth
must be 0.5 .. 30 µm
0.5 .. 30 µm
Mask material
Materials that can be used to mask etching.
Mask material
Materials that can be used to mask etching.
Material
Material
Etch rate 0.17 .. 0.47 µm/min
Wafer size
Wafer size
Equipment STS advanced oxide etcher
  • Wafers or wafer pieces smaller than 100mm in diamater, need to be mounted on another full wafer using thermal paste. In these cases, the batch size may vary depending on the shape and size of the pieces.
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 50 mm: 4, 75 mm: 1
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
 helium clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), fused silica, glass (Hoya), Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), silicon on insulator
Comments:
  • When mounting with thermal paste, breakage probability increases in separation.
  • The customer are encouraged to test the process with test wafers prior to run with device wafers.
Attachments
uic_STS-AOE Process Request Form.doc (85.0 KB, application/msword)
attached by ozgur (Mehmet Ozgur) on 2003-07-16 14:58