Process Hierarchy

  Advanced oxide etch
Process characteristics:
must be 0.5 .. 30 µm
0.5 .. 30 µm
Mask material
Materials that can be used to mask etching.
Mask material
Materials that can be used to mask etching.
Etch rate 0.17 .. 0.47 µm/min
Wafer size
Wafer size
Equipment STS advanced oxide etcher
  • Wafers or wafer pieces smaller than 100mm in diamater, need to be mounted on another full wafer using thermal paste. In these cases, the batch size may vary depending on the shape and size of the pieces.
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 50 mm: 4, 75 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
helium clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Borofloat (Schott), fused silica, glass (Hoya), Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), silicon on insulator
  • When mounting with thermal paste, breakage probability increases in separation.
  • The customer are encouraged to test the process with test wafers prior to run with device wafers.
uic_STS-AOE Process Request Form.doc (85.0 KB, application/msword)
attached by ozgur (Mehmet Ozgur) on 2003-07-16 14:58