on front E-beam Evaporation (Ti) |
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| Process characteristics: |
| Thickness Thickness of material to be deposited. |
|
|---|
| Material |
titanium |
|---|
| Sides processed |
either |
|---|
| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
Evaporator |
| Equipment characteristics: |
| Batch sizes |
100 mm: 8, 150 mm: 4 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
