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E-beam Evaporation (Ti): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
E-beam Evaporation (Ti)
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness
*
Å
µm
nm
Thickness of material to be deposited., must be 100 .. 5000 Å
100 .. 5000 Å
Material
titanium
Sides processed
either
Temperature
25 °C
Wafer size
Wafer size
100 mm
150 mm
Equipment
Evaporator
Equipment characteristics:
Batch sizes
100 mm: 8, 150 mm: 4
MOS clean
no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm