on front Tantalum DC Magnetron Sputtering |
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| Process characteristics: |
| Power Microwave power radiated into substrates being bonded |
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| Thickness |
|
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| Batch size |
12 |
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| Deposition rate Rate at which material is added to a wafer |
240 .. 2400 Å/min |
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| Material |
tantalum |
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| Pressure Pressure of process chamber during processing |
5 mTorr |
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| Sides processed |
either |
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| Temperature |
27 °C |
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| Wafer size |
|
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| Equipment |
Varian XM8 Sputterer
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| Equipment characteristics: |
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
stainless steel |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 2000 µm |
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| Comments: |
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