Process Hierarchy

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  Tantalum DC Magnetron Sputtering
Process characteristics:
Microwave power radiated into substrates being bonded
Microwave power radiated into substrates being bonded, must be 200 .. 2000 W
200 .. 2000 W
must be 200 .. 4000 Å
200 .. 4000 Å
Batch size 12
Deposition rate
Rate at which material is added to a wafer
240 .. 2400 Å/min
Material tantalum
Pressure of process chamber during processing
5 mTorr
Sides processed either
Temperature 27 °C
Wafer size
Wafer size
Equipment Varian XM8 Sputterer
  • Capable of sputtering titanium, aluminum, and copper. RF etch is also available.
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 2000 µm
  • Please specify whether samples are to be backsputtered (RF etched) prior to sputtering.