Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Fusion pre-bonding
Process characteristics:
Bonding force
Bonding force
must be 0 .. 7000 N
0 .. 7000 N
Pressure
Pressure of process chamber during processing
Pressure
Pressure of process chamber during processing, must be 0.075 .. 2250 mTorr
0.075 .. 2250 mTorr
Second substrate side bonded
Second substrate side bonded*
Substrate side bonded
Substrate side bonded*
Temperature
Temperature
must be 25 .. 550 °C
25 .. 550 °C
Alignment tolerance
Registration of CAD data to features on wafer
 1 µm
Alignment type
Method used to align materials to be bonded.
 optical
Batch size 2
Second substrate diameters 100 mm
Second substrate geometry wafer
Second substrate material silicon
Second substrate thickness 100 .. 1000 µm
Wafer holder
Device that holds the wafers during processing.
 teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer size
Wafer size
Equipment EVG 501 Bonder
  • No organic material allowed in this equipment.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 3000 µm