Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Fusion bonding with alignment Down
  1 pre-fusion-bond clean
  2 Fusion pre-bonding
  3 Nitrogen anneal
Process characteristics:
Bonding force
Specify contact force applied to substrates during bonding.
Bonding force*
Specify contact force applied to substrates during bonding., must be 0 .. 7000 N
0 .. 7000 N
Pressure
Pressure of bonding chamber during processing.
Pressure
Pressure of bonding chamber during processing., must be 0.075 .. 2250 mTorr
0.075 .. 2250 mTorr
Second substrate side bonded
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Second substrate side bonded*
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Substrate side bonded
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Substrate side bonded*
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Temperature
Temperature of the substrates during bonding.
Temperature*
Temperature of the substrates during bonding., must be 25 .. 550 °C
25 .. 550 °C
Alignment tolerance
Registration of CAD data to features on wafer
 5 µm
Alignment type
Method used to align materials to be bonded.
 optical
Batch size 2
Second substrate diameters 100 mm
Second substrate thickness 300 .. 1000 µm
Substrate diameters 100 mm
Substrate thickness 300 .. 1000 µm
Wafer size
Wafer size
Attachments
[Thumbnail]EV_Alignment_Positions.jpg (123.5 KB, image/jpeg)
attached by wbenard (William Benard) on 2005-10-19 09:59
Required location of alignment features. Assuming the front sides of the wafers will be bonded, the alignment marks should be on the front of one wafer and on the back of the other wafer.