Process Hierarchy

  Glass frit bonding (vacuum)
Process characteristics:
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Second substrate side bonded
Second substrate side bonded*
Substrate side bonded
Substrate side bonded*
Alignment tolerance
Registration of CAD data to features on wafer
10 µm
Batch size 2
Second substrate diameter 100 mm
Second substrate material Pyrex (Corning 7740)
Second substrate thickness 300 .. 1000 µm
Temperature 400 °C
Wafer size
Wafer size
Equipment EVG 501 Bonder
  • No organic material allowed in this equipment.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
metal chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, Pyrex (Corning 7740)
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 3000 µm