Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Titanium DC magnetron sputtering
Process characteristics:
Power
Microwave power radiated into substrates being bonded
Power*
Microwave power radiated into substrates being bonded, must be 100 .. 2500 W
100 .. 2500 W
Thickness
Thickness*
must be 20 .. 5000 Å
20 .. 5000 Å
Batch size 12
Deposition rate
Rate at which material is added to a wafer
 120 .. 3000 Å/min
Material titanium
Pressure
Pressure of process chamber during processing
 5 mTorr
Sides processed either
Temperature 27 °C
Wafer size
Wafer size
Equipment Varian XM8 Sputterer
  • Capable of sputtering titanium, aluminum, and copper. RF etch is also available.
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
 stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 2000 µm