Dehydration & vapor prime |
|
| Ambient Ambient to which substrate is exposed during processing |
HMDS |
|---|
| Pressure Pressure of process chamber during processing |
5 mmHg |
|---|
| Sides processed |
both |
|---|
| Temperature |
150 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Vapor Priming Oven |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 125 mm: 25, 150 mm: 25 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
cassette |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
