Process Hierarchy

  Wafer dicing (silicon only)
Process characteristics:
Blade thickness
Thickness of cutting blade for wafer dicing.
Blade thickness*
Thickness of cutting blade for wafer dicing.
Cuts per wafer
Number of cuts per wafer
Cuts per wafer*
Number of cuts per wafer , must be 1 .. 100
1 .. 100
Alignment type
Method used to align materials to be bonded.
Die dimension
Characteristic dimension of dies (e.g., side length of square) the equipment can accept
50 .. 100000 µm
Die separation (X-direction)
Die separation on wafer in X.
50 .. 100000 µm
Die separation (Y-direction)
Die separation on wafers in Y.
50 .. 100000 µm
Die width
Width of die.
50 .. 100000 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
Wafer size
Wafer size
Equipment MicroAutomation dicing saw
Equipment characteristics:
Batch sizes 100 mm: 1, 125 mm: 1, 50 mm: 1, 75 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, polyethylene, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm