Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide PECVD (TEOS)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 2 µm
0.01 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
 nitrogen, oxygen, TEOS
Deposition rate
Rate at which material is added to a wafer
 2592 Å/min
Excluded materials gold (category), copper
Material silicon dioxide
Microstructure amorphous
Pressure
Pressure of process chamber during processing
 3 Torr
Residual stress -55 MPa
Sides processed either
Temperature 350 °C
Wafer size
Wafer size
Equipment GSI Ultradep 1000
Equipment characteristics:
Batch sizes 100 mm: 3, 150 mm: 1
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.