Contact flat alignment and exposure |
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Alignment tolerance Registration of CAD data to features on wafer |
2 µm |
Feature geometry Shape of feature with dimensions characterized by the minimum feature size |
line |
Field geometry Shape of field with dimensions characterized by the maximum field size |
circle |
Intensity Intensity of light source |
20 mW/cm/cm |
Magnification |
1 |
Sides processed |
both |
Wavelength Wavelength of light used during the exposure |
365 .. 436 nm |
Wafer size |
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Equipment |
Karl Suss MA6 Contact Aligner |
Equipment characteristics: |
Batch sizes |
100 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1 |
Piece geometry Geometry of wafer pieces the equipment can accept |
circular, rectangular |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
Wafer holder Device that holds the wafers during processing. |
metal chuck |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, indium phosphide, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon on insulator |
Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 800 µm |
Comments: |
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