on front Ti DC-magnetron sputtering |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
argon |
|---|
| Deposition rate Rate at which material is added to a wafer |
0.0144 µm/min |
|---|
| Material |
titanium |
|---|
| Pressure Pressure of process chamber during processing |
5 mTorr |
|---|
| Sides processed |
either |
|---|
| Wafer size |
|
|---|
| Equipment |
CVC 610 |
| Equipment characteristics: |
| Batch sizes |
100 mm: 5, 150 mm: 5, 50 mm: 12, 75 mm: 5 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
