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Al sputtering (Metron): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Al sputtering (Metron)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 0.01 .. 2 µm
0.01 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
argon
Material
aluminum
Pressure
Pressure of process chamber during processing
7.5 mTorr
Sides processed
either
Wafer size
Wafer size
75 mm
100 mm
150 mm
Equipment
Metron 3290
Equipment characteristics:
Batch sizes
100 mm: 1, 150 mm: 1, 75 mm: 1
Piece dimension
Range of wafer piece dimensions the equipment can accept
0 .. 75 mm
Wafer holder
Device that holds the wafers during processing.
aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), silicon, silicon on insulator