Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Sputter deposition (CVC 610)
on front
  1 Ti DC-magnetron sputtering
Materialtitanium
on front
  2 Gold DC-magnetron sputtering
Materialgold
on front
  3 Stylus profilometer 1-D step measurement
Depth0 .. 1000 µm
Process characteristics:
Adhesion layer material
Adhesion layer material*
Adhesion layer thickness
If no adhesion layer will be used, enter 0 for this field.
Adhesion layer thickness*
If no adhesion layer will be used, enter 0 for this field. , must be 0 .. 50 nm
0 .. 50 nm
Material
Material*
Perform sheet resistance measurement
One measurement per batch on a monitor wafer
Perform sheet resistance measurement*
yes no
One measurement per batch on a monitor wafer
Thickness
Thickness ranges:
Al: 0 .. 1.0 um
Au: 0 .. 0.2 um
Ti: 0 .. 0.1 um
Thickness*
Thickness ranges: Al: 0 .. 1.0 um Au: 0 .. 0.2 um Ti: 0 .. 0.1 um, must be 0.1 .. 5 µm
0.1 .. 5 µm
Wafer size
Wafer size
Comments:
  • One measurement per batch.
    A monitor wafer will be used for the thickness metrology.
  • Allowed thickness ranges: (please contact for thicker depositions)
  • Al: 0 .. 1.0 um
  • Au: 0 .. 0.5 um
  • Cr: 0 .. 0.5 um
  • Ti: 0 .. 1.0 um
  • Mo: 0 .. 1.0 um