Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Silicon nitride LPCVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.1 .. 0.4 µm
0.1 .. 0.4 µm
Batch sizes 100 mm: 75, 150 mm: 50, 75 mm: 75
Material silicon nitride
Measured film thickness variation (+/- %) 10
Refractive index 1.95 .. 2.05
Residual stress 800 .. 1200 MPa
Sides processed both
Temperature 780 °C
Wafer size
Wafer size
Equipment
Comments:
  • Wafers need to be cleaned prior to shipment to this fab site.
  • This includes metrology (thickness, refractive index, wafer curvatures) on at least on 1 wafer per lot.