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Undoped polysilicon LPCVD : View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Undoped polysilicon LPCVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness
*
µm
nm
Thickness of material to be deposited., must be 0.01 .. 1 µm
0.01 .. 1 µm
Batch sizes
100 mm: 50, 150 mm: 25, 75 mm: 50
Material
polysilicon
Measured film thickness variation (+/- %)
10
Sides processed
both
Temperature
620 °C
Wafer size
Wafer size
75 mm
100 mm
150 mm
Equipment
Comments:
Wafers need to cleaned prior to this step.
The film has compressive stress.
standard metrology includes thickness only.
Estimated leadtime: 2 weeks.