Deep oxide etch - High aspect ratio: View

Process Hierarchy

Deep oxide etch - High aspect ratio

Process characteristics:

Depth

0.5 .. 20 µm

Mask material

Materials that can be used to mask etching.

Material

Please select the silicon dioxide type to be etched.

Aspect ratio 15 .. 20

Etch rate 0.3 .. 0.5 µm/min

Etch type dry anisotropic

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

aluminum: 10, chromium: 10, nickel: 15, photoresist (G-line): 3, silicon: 5

Wafer size

Equipment Ulvac

Equipment characteristics:

Batch sizes 100 mm: 1, 150 mm: 1

MOS clean no

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat, notched

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

Borofloat (Schott), Corning 1737, fused silica, glass (Hoya), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 1500 µm

Attachments

ulvac12.jpg (20.4 KB, image/jpeg): attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:34; Controlled sidewall angle.
ulvac11.jpg (33.8 KB, image/jpeg): attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:31; CVD SiO2 6um deep AR=9
ulvac8.jpg (18.6 KB, image/jpeg): attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:30; CVD SiO2 22um deep etch with a-silicon mask
ulvac7.jpg (16.4 KB, image/jpeg): attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:30; CVD SiO2 22um deep etch with a-silicon mask
ulvac5.jpg (9.5 KB, image/jpeg): attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:30; Fused silica 2um deep 0.15um wide trenches
ulvac4.jpg (12.3 KB, image/jpeg): attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:30; CVD SiO2 0.63um side, 5.7um deep trenches
ulvac3.jpg (12.3 KB, image/jpeg): attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:30; Fused silica 2um deep 0.5um wide trenches