Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Deep oxide etch - Ultra smooth sidewall
Process characteristics:
Depth
Depth*
must be 0.5 .. 20 µm
0.5 .. 20 µm
Mask material
Materials that can be used to mask etching.
Mask material*
Materials that can be used to mask etching.
Material
Please select the silicon dioxide type to be etched.
Material*
Please select the silicon dioxide type to be etched.
Aspect ratio 0.5 .. 8
Etch rate 0.3 .. 0.5 µm/min
Etch type dry anisotropic
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 aluminum: 10, photoresist (G-line): 2.5, silicon: 5, tungsten silicide: 5
Wafer size
Wafer size
Equipment Ulvac
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), Corning 1737, fused silica, glass (Hoya), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1500 µm
Attachments
[Thumbnail]ulvac8.jpg (18.6 KB, image/jpeg)
attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:27
[Thumbnail]ulvac9.jpg (17.6 KB, image/jpeg)
attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:27
[Thumbnail]ulvac10.jpg (15.3 KB, image/jpeg)
attached by ozgur (Mehmet Ozgur) on 2004-06-23 16:27