Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon dioxide PECVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 2 µm
0.01 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
 nitrous oxide, silane, helium
Deposition rate
Rate at which material is added to a wafer
 6700 Å/min
Material silicon dioxide
Microstructure amorphous
Refractive index 1.4
Sides processed either
Temperature 380 °C
Wafer size
Wafer size
Equipment GSI ultratech
  • Other substrate and device materials may be considered. Please inquire if interested in depositing on other materials.
  • Graphite carrier used for wafers smaller than 100mm diameter.
Equipment characteristics:
Batch sizes 100 mm: 1, 25 mm: 5, 50 mm: 1, 75 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, quartz (fused silica), silicon, Pyrex (Corning 7740)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Comments:
  • These parameters not yet characterized: dielectric strength, film stress, wet etch rate.