on front Gallium Nitride (GaN), ICP Etch (Versaline) |
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| Process characteristics: |
| Depth |
|
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| Etch rate |
1.6 µm/min |
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| Material |
gallium nitride |
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| Sides processed |
either |
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| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
VLR 700 Cluster -Chlorine Etch Chamber |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat |
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| Wafer holder Device that holds the wafers during processing. |
cassette |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), gallium phosphide, indium phosphide, gallium arsenide, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 700 µm |
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