Manual Photoresist post-exposure bake (hotplate) |
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| Duration |
60 .. 300 s |
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| Material |
SU-8 |
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| Temperature |
65 .. 100 °C |
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| Wafer size |
|
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| Equipment |
Hotplate |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1 |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, other, rectangular, triangular shard |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, gallium arsenide, indium phosphide, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 800 µm |
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