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NanoGetter deposition and patterning: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
NanoGetter deposition and patterning
1
Shadow mask-making
on front
2
NanoGetter sputter deposition
Process characteristics:
Maximum step hight
The maximum depth of cavities or through holes.
Maximum step hight
*
µm
The maximum depth of cavities or through holes., must be 0 .. 500 µm
0 .. 500 µm
Patterning Method
the preferred method to be used for patterning the blanket nanogetter film. Please note that if the maximum step hight on the surface is > 30um, then shadow masking will be automatically selected.
Patterning Method
*
lift-off
photolithography
shadow masking
the preferred method to be used for patterning the blanket nanogetter film. Please note that if the maximum step hight on the surface is > 30um, then shadow masking will be automatically selected.
Thickness
Thickness
*
nm
must be 5 .. 500 nm
5 .. 500 nm
Material
NanoGetter
Comments:
This module requires a mask for the Nanogetter patterning.