on front Titanium DC-magnetron sputtering |
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| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
argon |
|---|
| Deposition rate Rate at which material is added to a wafer |
0.0144 µm/min |
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| Material |
titanium |
|---|
| Pressure Pressure of process chamber during processing |
5 mTorr |
|---|
| Sides processed |
either |
|---|
| Uniformity |
-0.05 .. 0.05 |
|---|
| Wafer size |
|
|---|
| Equipment |
DC magnetron |
| Equipment characteristics: |
| Batch sizes |
150 mm: 3 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), quartz (single crystal), Borofloat (Schott), silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
