Process Hierarchy

  Low Stress silicon nitride LPCVD (200 MPa)
Process characteristics:
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.03 .. 2 µm
0.03 .. 2 µm
Batch size 25
Excluded materials gold (category), copper
Material silicon nitride
Pressure
Pressure of process chamber during processing
1 atm
Sides processed both
Wafer size
Wafer size