Process Hierarchy

  Super Low-Stress LPCVD Silicon Nitride
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0 .. 4 µm
0 .. 4 µm
Allowed materials polysilicon on silicon dioxide, silicon germanium, silicon (single crystal), silicon nitride on silicon, silicon dioxide (low temperature), silicon oxy-nitride, silicon nitride, silicon on insulator, silicon dioxide, silicon, silicon dioxide on silicon, silicon on sapphire, silicon carbide, polysilicon, quartz (single crystal), silicon nitride on quartz, silicon/glass composite, silicon (doped), polysilicon on quartz, silicon dioxide (category), quartz (fused silica), silicon nitride on silicon dioxide
Ambient to which substrate is exposed during processing
dichlorosilane, ammonia
Material silicon nitride
Refractive index 2.3
Residual stress 0 .. 100 MPa
Sides processed both
Temperature 820 °C
Uniformity -0.075 .. 0.075
Wafer size
Wafer size
Equipment Furnace : Nitride
Equipment characteristics:
Batch sizes 100 mm: 25, 150 mm: 25, 200 mm: 25
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
274 .. 700 µm