Process Hierarchy

  Stoichiometric silicon nitride LPCVD
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0 .. 0.475 µm
0 .. 0.475 µm
Deposition rate
Rate at which material is added to a wafer
0.0035 µm/min
Material silicon nitride
Residual stress 800 MPa
Sides processed both
Temperature 800 °C
Uniformity -0.07 .. 0.07
Wafer size
Wafer size
Equipment Furnace : Nitride
Equipment characteristics:
Batch sizes 100 mm: 25, 150 mm: 25, 200 mm: 25
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
274 .. 700 µm