Process Hierarchy

  Stoichiometric silicon nitride LPCVD
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0.02 .. 0.5 µm
0.02 .. 0.5 µm
Deposition rate
Rate at which material is added to a wafer
35 Å/min
Material silicon nitride
Residual stress 900 MPa
Sides processed both
Temperature 800 °C
Uniformity 0.025
Wafer size
Wafer size
Equipment FNB2
Equipment characteristics:
Batch sizes 150 mm: 25
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm