Process Hierarchy

  Low Stress silicon nitride LPCVD (300 MPa)
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0.05 .. 2 µm
0.05 .. 2 µm
Allowed materials silicon, silicon nitride, polysilicon, silicon dioxide
Ambient to which substrate is exposed during processing
dichlorosilane, ammonia
Deposition rate
Rate at which material is added to a wafer
31 Å/min
Material silicon nitride
Pressure of process chamber during processing
200 mTorr
Refractive index 2.2
Residual stress 200 .. 300 MPa
Sides processed both
Temperature 810 °C
Uniformity 0.05
Wafer size
Wafer size
Equipment FNB2
Equipment characteristics:
Batch sizes 150 mm: 25
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm