Undoped polysilicon LPCVD |
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| Process characteristics: |
| Thickness Thickness of material to be deposited. |
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| Allowed materials |
silicon, silicon nitride, polysilicon, silicon dioxide |
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| Ambient Ambient to which substrate is exposed during processing |
silane |
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| Deposition rate Rate at which material is added to a wafer |
60 Å/min |
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| Material |
polysilicon |
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| Pressure Pressure of process chamber during processing |
0.3 Torr |
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| Residual stress |
-400 .. -200 MPa |
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| Sides processed |
both |
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| Temperature |
565 °C |
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| Uniformity |
0.025 |
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| Wafer size |
|
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| Equipment |
FNB3 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 25 |
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| MOS clean |
yes |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
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