Process Hierarchy

  Photoresist strip (O2 plasma)
Etch rate 1 .. 3 µm/min
Gas O2, NF3, CF4, Nitrogen
Materials photoresist on silicon nitride, photoresist on silicon dioxide, photoresist on silicon
Thickness 0 .. 10 µm
Wafer size
Wafer size
Equipment Ulvac Enviro
Equipment characteristics:
Batch sizes 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm