Process Hierarchy

on front
  Silicon dioxide CMP
Process characteristics:
Thickness removed
Amount of material removed
Thickness removed*
Amount of material removed, must be 0.05 .. 8 µm
0.05 .. 8 µm
Material silicon dioxide
Pad pressure
Pressure exerted by the pad on the front (polished side) of the wafer
2 .. 8 psi
Removal rate
Rate at which material is removed
4000 Å/min
Sides processed either
Uniformity 0.04
Wafer size
Wafer size
Equipment Strasbaugh 6EC
Equipment characteristics:
Batch sizes 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm
  • Particle count : < 200 @ 0.2um+
  • TTV : <5%