Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  TEOS PECVD (STS)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 7 µm
0.1 .. 7 µm
Ambient
Ambient to which substrate is exposed during processing
 oxygen, TEOS, nitrogen
Deposition rate
Rate at which material is added to a wafer
 2000 Å/min
Material silicon dioxide
Microstructure amorphous
Pressure
Pressure of process chamber during processing
 3 Torr
Residual stress -350 MPa
Sides processed either
Temperature 300 °C
Uniformity 0.03
Wafer size
Wafer size
Equipment STS PECVD
Equipment characteristics:
Batch sizes 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, fused silica, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 675 µm