on front Silicon dioxide PECVD (STS) |
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| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrous oxide, silane, nitrogen |
|---|
| Deposition rate Rate at which material is added to a wafer |
2000 Å/min |
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| Material |
silicon dioxide |
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| Microstructure |
amorphous |
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| Pressure Pressure of process chamber during processing |
2.4 Torr |
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| Residual stress |
-300 MPa |
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| Sides processed |
either |
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| Temperature |
300 °C |
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| Uniformity |
0.02 |
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| Wafer size |
|
|---|
| Equipment |
STS PECVD |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, fused silica, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
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