Process Hierarchy

on front
  Silicon dioxide PECVD (STS)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient to which substrate is exposed during processing
nitrous oxide, silane, nitrogen
Deposition rate
Rate at which material is added to a wafer
2000 Å/min
Material silicon dioxide
Microstructure amorphous
Pressure of process chamber during processing
2.4 Torr
Residual stress -300 MPa
Sides processed either
Temperature 300 °C
Uniformity 0.02
Wafer size
Wafer size
Equipment STS PECVD
Equipment characteristics:
Batch sizes 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, fused silica, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm