Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon DRIE (Bosch Process)
Process characteristics:
Depth
Depth*
must be 1 .. 700 µm
1 .. 700 µm
Aspect ratio 15
Etch rate 4 µm/min
Gas SF6, C4F8, Argon, O2, He
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 AZ 5214: 75, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment STS ASE DRIE
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
 helium clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 250 .. 1000 µm