on front Hafnium dioxide (HfO2) ALD Down |
|
| Process characteristics: |
| Temperature |
|
|---|
| Thickness |
|
|---|
| Batch size |
1 |
|---|
| Material |
hafnium dioxide |
|---|
| Pressure Pressure of process chamber during processing |
1 Torr |
|---|
| Refractive index |
1.95 |
|---|
| Resistivity |
0.01 Ω*cm |
|---|
| Sides processed |
either |
|---|
| Equipment |
Viscous flow reactor |
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Piece dimension Range of wafer piece dimensions the equipment can accept |
1 .. 150 mm |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
triangular shard, other, rectangular, irregular, circular |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 1000 µm |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, silicon on insulator, alumina, silicon, polycarbonate |
|---|
