Process Hierarchy

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  Hafnium dioxide (HfO2) ALD Down
Process characteristics:
must be 100 .. 177 °C
100 .. 177 °C
must be 5 .. 150 nm
5 .. 150 nm
Batch size 1
Material hafnium dioxide
Pressure of process chamber during processing
1 Torr
Refractive index 1.95
Resistivity 0.01 Ω*cm
Sides processed either
Equipment Viscous flow reactor
Equipment characteristics:
MOS clean no
Piece dimension
Range of wafer piece dimensions the equipment can accept
1 .. 150 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
triangular shard, other, rectangular, irregular, circular
Piece thickness
Range of wafer piece thickness the equipment can accept
100 .. 1000 µm
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
fused silica, silicon on insulator, alumina, silicon, polycarbonate