Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact lithography (Image reversal)
  1 HMDS Vapor Prime
MaterialHMDSThickness100 Å
on front
  2 Photoresist Spin Coat ACS200 (AZ 5214E)
MaterialAZ 5214e
  3 Photoresist Softbake ACS200
  4 Contact flat alignment and exposure
  5 Photoresist Softbake ACS200
  6 Flood Expose
  7 Photoresist Develop (5214E)
Depth1.4 .. 3 µmMaterialAZ 5214e
  8 Linewidth Microscope Measurement
  9 Microscope inspection
Process characteristics:
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer
unconstrained
Alignment type
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Alignment type*
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Min feature size
Min feature size*
unconstrained
Perform edge bead removal
Perform edge bead removal*
yes no
Perform linewidth metrology
Two measurement per wafer
Perform linewidth metrology*
yes no
Two measurement per wafer
Perform microscope inspection
30 mins inspection per wafer
Perform microscope inspection*
yes no
30 mins inspection per wafer
Perform stylus profilometry
One measurement per wafer
Perform stylus profilometry*
yes no
One measurement per wafer
Batch size 1
Magnification 1
Resist thickness 2.1 µm
Wafer size
Wafer size