Process Hierarchy

on front
  Contact lithography (Image reversal)
MaterialHMDSThickness100 Å
MaterialAZ 5214e
Depth1.4 .. 3 µmMaterialAZ 5214e
Process characteristics:
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer
unconstrained
Alignment type
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Alignment type*
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Min feature size
Min feature size*
unconstrained
Perform edge bead removal
Perform edge bead removal*
yes no
Perform linewidth metrology
Two measurement per wafer
Perform linewidth metrology*
yes no
Two measurement per wafer
Perform microscope inspection
30 mins inspection per wafer
Perform microscope inspection*
yes no
30 mins inspection per wafer
Perform stylus profilometry
One measurement per wafer
Perform stylus profilometry*
yes no
One measurement per wafer
Batch size 1
Magnification 1
Resist thickness 2.1 µm
Wafer size
Wafer size